BAND DISCONTINUITY IN STRAINED IN(AS,P) INP HETEROSTRUCTURES/

Photocurrent and photoluminescence measurements have been performed on strained InAsxP1-x/InP multiquantum wells grown by chemical beam epit axy, for arsenic content 0.25<x<0.65 and various well widths. The ener gies deduced from photocurrent spectra of well-resolved electron-heavy -hole and electron-light-hole fundamental excitonic transitions are co mpared with calculations within the envelope function formalism includ ing strain effects. A conduction-band offset ratio Q(C) of 0.70+/-0.02 is determined and is found to be independent of the arsenic compositi on in wells. (C) 1998 American Institute of Physics.