BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF METAL GAN INTERFACES/

Ballistic-electron-emission microscopy (BEEM) spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BE EM measurements, spectra yield a Schottky barrier height of 1.04 eV th at agrees well with the highest values measured by conventional method s. A second threshold is observed in the spectra at about 0.2 V above the first threshold. Imaging of the Au/GaN interface reveals transmiss ion in nearly all areas, although the magnitude is small and varies by an order of magnitude. BEEM of other GaN material shows no transmissi on in any areas. (C) 1998 American Institute of Physics.