THEORETICAL-STUDY OF A GAAS LATERAL P-I-N PHOTODETECTOR

We present a numerical study of a high speed GaAs lateral p-i-n (LPIN) photodiode. The LPIN is a planar structure composed of interdigitated p(+) and n(+) wells. A metal-semiconductor-metal (MSM) photodiode wit h identical finger spacing and geometry is simulated for comparison. W hen pulsed with an 827 nm optical source at 0.68 mW/cm(2), the lateral p-i-n exhibited improved frequency performance and responsivity compa red to the MSM. The dark current and capacitance are similar in magnit ude between the two devices. Based on these results, it is concluded t hat a lateral p-i-n can be an attractive alternative to standard MSM p hotodetectors. (C) 1998 American Institute of Physics.