EPITAXIAL-GROWTH OF HGBA2CACU2O6-FILMS ON SRTIO3 SUBSTRATES(DELTA THIN)

Authors
WU JZ YUN SH GAPUD A KANG BW KANG WN TIDROW SC MONAHAN TP CUI XT CHU WK
Citation
Jz. Wu et al., EPITAXIAL-GROWTH OF HGBA2CACU2O6-FILMS ON SRTIO3 SUBSTRATES(DELTA THIN), Physica. C, Superconductivity, 277(3-4), 1997, pp. 219-224
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
277
Issue
3-4
Year of publication
1997
Pages
219 - 224
Database
ISI
SICI code
0921-4534(1997)277:3-4<219:EOHOSS>2.0.ZU;2-6
Abstract
High quality c-axis oriented HgBa2CaCu2O6+delta thin films have been g rown epitaxially on SrTiO3 substrates with the a-axis of the film alig ned with the (100)-axis of the substrates. The film-substrate interfac e quality can be greatly improved by using a fast temperature ramping Hg-vapor annealing process (FTRA). Zero-resistance T-c values above 12 0 K are routinely obtained for FTRA processed HgBa2CaCu2O6+delta thin films.