RELATIVISTIC EFFECTS IN SILICON CHEMISTRY - ARE THE EXPERIMENTAL HEATS OF FORMATION OF THE SILICON ATOM AND SIH4 COMPATIBLE

Citation
Cl. Collins et Rs. Grev, RELATIVISTIC EFFECTS IN SILICON CHEMISTRY - ARE THE EXPERIMENTAL HEATS OF FORMATION OF THE SILICON ATOM AND SIH4 COMPATIBLE, The Journal of chemical physics, 108(13), 1998, pp. 5465-5468
Citations number
35
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
108
Issue
13
Year of publication
1998
Pages
5465 - 5468
Database
ISI
SICI code
0021-9606(1998)108:13<5465:REISC->2.0.ZU;2-L
Abstract
We have investigated the effects of relativity on the atomization ener gy of silane, SiH4, to attempt to resolve an earlier discrepancy betwe en theory and experiment. Using a spin-free no-pair Hamiltonian that i s based on a second-order Douglas-Kroll transformation, we find that r elativity reduces the atomization energy of SiH4 by 0.7 kcal mol(-1): a small change, but sufficient to bring theory and experiment into agr eement when we include experimental uncertainties. Excitation energies in the silicon atom, S-5(sp(3))-P-3(s(2)p(2)), and the atomic cation, P-4(sp(2))-P-2(s(2)p), which involve a reduction in the number of s-e lectrons, increase similar to 1.2 kcal mol(-1) when we include relativ ity. These excitation energies show an even larger increase, about 2.5 kcal mol(-1), when we include con correlation. By contrast, the ioniz ation potential, which involves no change in the number of s-electrons -electron configurations s(2)p(2) in the neutral atom and s(2)p in the cation-changes similar to 0.2 kcal mol(-1) when we include relativity . These predictions are consistent with the notion that s-electrons ar e the most affected by relativity, and that changes in the amount of s -character are related, qualitatively, to differential relativistic ef fects. (C) 1998 American Institute of Physics. [S0021-9606(98)02713-5] .