S. Gokhale et al., ELECTRONIC-STRUCTURE OF BENZENE ADSORBED ON SINGLE-DOMAIN SI(001)-(2X1) - A COMBINED EXPERIMENTAL AND THEORETICAL-STUDY, The Journal of chemical physics, 108(13), 1998, pp. 5554-5564
Benzene adsorption on a single-domain Si(001)-(2X1) surface has been s
tudied by thermal desorption spectroscopy (TPD) and angle-resolved pho
toelectron spectroscopy (ARUPS) using linearly polarized synchrotron r
adiation. Angle-resolved photoemission spectra for the saturated benze
ne layer exhibit well-defined polarization and azimuthal dependencies
compatible with a flat-lying benzene molecule with local C-2 upsilon s
ymmetry. Based on these results two structure models are proposed. Fir
st-principles density functional cluster calculations have been perfor
med for each of these structures, Total energy minimization and a deta
iled comparison of the experimental ARUPS spectra with the one-particl
e spectra of the model clusters leads to a 1,4-cyclohexadienelike adso
rption complex with a flat-lying benzene molecule which is di-sigma bo
nded to the two dangling bonds of a single Si-Si surface dimer. Especi
ally, one of the unoccupied 1 e(2u) (pi) orbitals of the free benzene
molecule shifts down (by about 3 eV) and evolves into the highest occ
upied molecular orbital (HOMO) of the chemisorbed molecule. (C) 1998 A
merican Institute of Physics. [S0021-9606(98)03213-9].