A NEW PATHWAY TO GAN - DEPOSITION OF GAN-CLUSTERS ON FUNCTIONALIZED THIOL-SAMS ON GOLD

We demonstrate the synthesis of a gallium and nitrogen containing film onto the surface of a hydroxyl-terminated self-assembled monolayer (S AM) on gold. This layer was produced by rinsing the sample in a soluti on of a donor-stabilized galliumtriazid, Ga(N-3)(3)NEt3. Surface-cover age in dependence on reaction time was analyzed. Repeatingly rinsing t he SAMs in Ga(N-3)(3)NEt3-solution in toluene, cleaning with toluene, drying in vacuum and exposure to NH3 allows a stepwise growth of the f ilm, i.e. increasing of the surface-coverage. These films were compare d to films, which were not exposed to ammonia but rather to moisture. Hydrolytic cleavage of the Ga-N-3-bond was the dominant process in thi s case. The films were analyzed with spontaneous desorption time of fl ight mass spectrometry (SDMS) and Rutherford backscattering spectrosco py (RBS). (C) 1998 Elsevier Science B.V.