SILICON-BASED INTERMINIBAND INFRARED-LASER

Citation
L. Friedman et al., SILICON-BASED INTERMINIBAND INFRARED-LASER, Journal of applied physics, 83(7), 1998, pp. 3480-3485
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
7
Year of publication
1998
Pages
3480 - 3485
Database
ISI
SICI code
0021-8979(1998)83:7<3480:SII>2.0.ZU;2-H
Abstract
Simulations of a room-temperature p-i-p coherently strained Si0.5Ge0.5 /Si superlattice quantum-parallel laser diode have been made, Calculat ions have been made of the local-in-k-space population inversion betwe en the nonparabolic heavy-hole valence minibands, HH2 and HL1. Lasing is at 5.4 mu m and the optical dipole matrix element is 3.7 A. Analysi s of radiative-and-phonon scattering between the ''mixed'' bands indic ates a lifetime difference between the upper and lower states of 2.4 p s. At an injected current density of 5000 A/cm(2), a laser gain of 134 cm(-1) is calculated. (C) 1998 American Institute of Physics. [S0021- 8979(98)05507-8].