EXCIMER-LASER IRRADIATION OF SI3N4 FILMS DEPOSITED ON SI

We have investigated the effect of argon excimer laser irradiation of silicon nitride films deposited on silicon substrates. When the film t hickness is equal to or greater than 40 nm, the irradiation induces am orphous silicon precipitation near the thin surface layer of the film, which has been clarified by means of x-ray photoelectron and Raman sp ectroscopy. The formation mechanism of amorphous silicon with the irra diation is discussed. The phase of silicon precipitation depends on th e thermal properties of the substrate material. (C) 1998 American Inst itute nf Physics. [S0021-8979(98)04507-1].