SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN

A model to explain the observed low transverse mobility in GaN by scat tering of electrons at charged dislocation lines is proposed. Filled t raps along threading dislocation lines act as Coulomb scattering cente rs. The statistics of trap occupancy at different doping levels are in vestigated. The theoretical transverse mobility from Coulomb scatterin g at charged traps is compared to experimental data. Due to the repuls ive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charg ed dislocation lines. (C) 1998 American Institute of Physics. [S0021-8 979(98)02207-5].