NANOELECTRONICS USING CONDUCTANCE QUANTIZATION

Citation
Rm. Cosby et al., NANOELECTRONICS USING CONDUCTANCE QUANTIZATION, Journal of applied physics, 83(7), 1998, pp. 3914-3916
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
7
Year of publication
1998
Pages
3914 - 3916
Database
ISI
SICI code
0021-8979(1998)83:7<3914:NUCQ>2.0.ZU;2-7
Abstract
Using a simple adiabatic transport model, we show that basic electroni c functions may theoretically be achieved by manipulating a single pro pagating mode in a system with quantized levels of conduction, For a q uantum point contact with a centered and tunable depletion island form ed in a two-dimensional electron gas, a sinusoidal island bias results in a pulsed source-drain conductance. For single, multiple parallel, and multiple independent configurations of this device, the functions of a digital clock, digital frequency doubler, and hexadecimal counter are described, (C) 1998 American Institute of Physics. [S0021-8979(98 )00107-8].