MONTE-CARLO SIMULATION OF AN AMORPHOUS HYDROGENATED SILICON FILM DEPOSITION FROM A GAS-JET ACTIVATED BY AN ELECTRON-BEAM

A Monte Carlo hybrid model was developed to simulate film deposition f rom a gas jet activated by an electron beam, This model includes calcu lation of the interaction of an electron beam with a gas jet and the t ransport of particles from the activation zone to the substrate. In th e first stage, the three-dimensional distribution of monosilane's diss ociation rate in a mixture of Ar with 10% SiH4 was determined. Using t his distribution, absolute deposition rates for an amorphous hydrogena ted silicon film were calculated and they compared favorably with expe rimental data. (C) 1998 American Institute of Physics. [S0021-8979(98) 02006-4].