COMMENT ON AMORPHIZATION AND DEFECT RECOMBINATION IN ION-IMPLANTED SILICON-CARBIDE

It is demonstrated that the simplified analysis of Rutherford backscat tering\channeling data on damage production in SiC performed by Grimal di et al. [J. Appl, Phys, 81, 7181 (1997)] cannot be used to calculate the atomic displacement energy. The value of 12 eV at which the autho rs arrive is much too small. Moreover, their conclusion of similar dis placement energies in Si and SiC is essentially wrong. The general rea sons for that are discussed and illustrated by an example. (C) 1998 Am erican Institute of Physics. [S0021-8979(98)01607-7].