MEASUREMENT OF THE DEFORMATION POTENTIALS FOR GAAS USING POLARIZED PHOTOLUMINESCENCE

The deformation potentials a, b and d for GaAs have been determined fr om polarized photoluminescence measurements upon a set of epitaxially grown strained GaAs structures possessing varying levels of compressiv e biaxial lattice strain. X-ray diffraction measurements yield values for the degree of lattice strain while the polarized photoluminescence measurements permit a separate determination to be made of the heavy hole and light hole band energies. Correlation of these data allows fo r the determination of the deformation potentials within the context o f the orbital-strain Hamiltonian. (C) 1998 Published by Elsevier Scien ce B.V.