F. Schauer et al., SPACE-CHARGE-LIMITED POST TRANSIT CURRENTS SPECTROSCOPY IN POLY(METHYLPHENYLSILYLENE), Advanced materials for optics and electronics, 7(2), 1997, pp. 61-65
Citations number
23
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
Transient space-charge-limited currents (T-SCLCs) were used as a metho
d for examining drift mobility, recombination and transport mechanisms
for a typical poly(silylene), poly(methylphenylsilylene) (PMPSi). It
was found that T-SCLCs present a unique possibility for injecting cons
tant charge into a material with strong dependence of the generation e
fficiency on the electric field strength. This charge is given by spac
e charge limitations and is thus independent of the transport properti
es of the material, The post-transit T-SCLC hole emission signals from
deep traps have been measured using post-transit T-SCLCs. A density-o
f-electron-states distribution for deep trapping hole states with a ta
il-like exponential and a Gaussian distribution centred at 0.55 eV wer
e found. (C) 1997 by John Wiley & Sons, Ltd.