INTERACTION EFFECTS AT THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI SIGE SUPERLATTICES/

Citation
G. Brunthaler et al., INTERACTION EFFECTS AT THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI SIGE SUPERLATTICES/, Solid state communications, 106(3), 1998, pp. 157-161
Citations number
43
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
106
Issue
3
Year of publication
1998
Pages
157 - 161
Database
ISI
SICI code
0038-1098(1998)106:3<157:IEATMM>2.0.ZU;2-O
Abstract
A metal-insulator transition was induced by in-plane magnetic fields u p to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. T he localisation is not observed for perpendicular magnetic fields. A c omparison with magnetoconductivity investigations in the weakly locali sed regime shows that the delocalising effect originates from the inte raction-induced spin-triplet term in the particle-hole diffusion chann el. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures. (C) 1998 Elsevier Science Ltd. A ll rights reserved.