G. Brunthaler et al., INTERACTION EFFECTS AT THE MAGNETIC-FIELD-INDUCED METAL-INSULATOR-TRANSITION IN SI SIGE SUPERLATTICES/, Solid state communications, 106(3), 1998, pp. 157-161
A metal-insulator transition was induced by in-plane magnetic fields u
p to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. T
he localisation is not observed for perpendicular magnetic fields. A c
omparison with magnetoconductivity investigations in the weakly locali
sed regime shows that the delocalising effect originates from the inte
raction-induced spin-triplet term in the particle-hole diffusion chann
el. It is expected that this term, possibly together with the singlet
particle-particle contribution, is of general importance in disordered
n-type Si bulk and heterostructures. (C) 1998 Elsevier Science Ltd. A
ll rights reserved.