TOPOLOGICAL DEFECTS, ORIENTATIONAL ORDER, AND DEPINNING OF THE ELECTRON-SOLID IN A RANDOM POTENTIAL

Authors
Citation
Ha. Fertig et Mc. Cha, TOPOLOGICAL DEFECTS, ORIENTATIONAL ORDER, AND DEPINNING OF THE ELECTRON-SOLID IN A RANDOM POTENTIAL, Physica. B, Condensed matter, 212(3), 1995, pp. 267-272
Citations number
38
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
212
Issue
3
Year of publication
1995
Pages
267 - 272
Database
ISI
SICI code
0921-4526(1995)212:3<267:TDOOAD>2.0.ZU;2-E
Abstract
Two-dimensional classical electron solids under the influence of modul ation-doped impurities are studied by using a molecular dynamics metho d. We find that in the strong disorder limit the ground state configur ation contains both isolated dislocations and disclinations, whereas i n the weak disorder regime only dislocations are present. We show, via continuum elasticity theory, that the ground state of the lattice sho uld be unstable against a proliferation of free disclinations above a critical dislocation density. Associated with this, the behavior of th e depinning electric field changes.