PERIOD-DOUBLING ROUTE TO CHAOS IN SIGE IMPATT DIODES

An instantaneous electric model for a SiGe IMPATT diode is calculated here from the physical quantities provided by the foundry, The model i s used for the nonlinear simulation of IMPATT-hased circuits, which ar e prone to instability, fn this letter, a bifurcation analysis is carr ied out in order to determine their dynamical response, as a function of any suitable parameter, The technique has been applied to the equiv alent circuit of the reflection measurement system, from which the IMP ATT immitance variation curves are usually determined. The bifurcation analysis allowed the detection of a period doubling route to chaos, i n good agreement with the experimental observations.