DETERMINATION OF THE SPIN-EXCHANGE INTERACTION CONSTANT IN WURTZITE GAN

Wurtzite GaN grown onto an A-plane sapphire exhibits a uniaxial strain because the thermal expansion coefficient of the substrate is anisotr opic. Measuring the dependence of the transition energies and of the o scillator strengths on the polarization of light, we deduced the value of the spin-exchange energy in wurtzite GaN: y approximate to 0.6+/-0 .1 meV.