SPONTANEOUS FORMATION OF AN ORDERED C(4X2)-(2X1) DOMAIN PATTERN ON GE(001)

Citation
Hjw. Zandvliet et al., SPONTANEOUS FORMATION OF AN ORDERED C(4X2)-(2X1) DOMAIN PATTERN ON GE(001), Physical review. B, Condensed matter, 57(12), 1998, pp. 6803-6806
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
12
Year of publication
1998
Pages
6803 - 6806
Database
ISI
SICI code
0163-1829(1998)57:12<6803:SFOAOC>2.0.ZU;2-9
Abstract
Scanning-tunneling-microscopy measurements of Ge(001) reveal the prese nce of an ordered domain pattern consisting of c(4X2) and (2X1) domain s arranged in stripes with a width of several dimer row spacings, orie nted along the dimer rows. We suggest that the existence of a soft dom ain wall between the domains combined with a difference in the stress component along the dimer bond for the (2X1) and c(4X2) domains, respe ctively, can conspire to produce such an ordered domain phase. A simpl e model based on strain relaxation explains the observed size of the d omain pattern.