HBTS RF NOISE PARAMETER DETERMINATION BY MEANS OF AN EFFICIENT METHODBASED ON NOISE-ANALYSIS OF LINEAR-AMPLIFIER NETWORKS

A method for the evaluation of the RF noise figure of heterojunction b ipolar transistors (HBT's)is presented. The noise analysis is based on the use of the correlation matrices. The two-port device is described as an interconnection of basic two-port devices whose noise behavior is known, The circuit theory of linear noisy networks shows that any t wo-port device can be replaced by a noise equivalent circuit which con sists of the original two-port assumed to be noiseless and possess two additional noise sources. The purpose of this paper is to obtain the four noise parameters of the device, taking into account the access re sistances and inductances, The calculations presented show good agreem ent with measurements, and as a consequence, they permit a good estima tion of the noise performance of the structure without neglecting any parasitic elements of the equivalent circuit.