AN ACCURATELY SCALED SMALL-SIGNAL MODEL FOR INTERDIGITATED POWER P-HEMT UP TO 50 GHZ

In this paper, the authors report an approach for constructing scalabl e small-signal models for interdigitated power pseudomorphic high-elec tron-mobility transistors (P-HEMT's). By using cold-FET and Yang-Long measurement, as well as direct extraction procedures, scaling rules fo r extrinsic components were established that allow accurate models ove r a broad frequency range. These models have been used to design ultra wide-band monolithic microwave integrated circuits (MMIC's) up to 50 G Hz.