RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS

The proposed work deals with rapid thermal processing of ionic boron, implanted in phosphorus-doped Cz-(100) silicon substrates through prot ecting oxide films, with different technological parameters. After imp lantation, the samples were rapidly thermally annealed at temperatures ranging from 900 to 1100 degrees C, in argon ambient gas, for differe nt annealing durations. The rapid thermal annealings (RTA) are carried out too, for some samples, after oxide mask removing. The total boron profiles, before and after annealing steps, in the SiO2/monocrystalli ne silicon systems were determined using Secondary Ion Mass Spectromet ry (SIMS). Using a background concentration, the junction depth in the substrate has been investigated under various annealing treatments. T he diffusion process kinetic of implanted boron into oxide and monocry stalline silicon during rapid thermal treatments has been investigated too.