EFFECTS OF DEPOSITION RATE ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF REACTIVELY EVAPORATED THIN-FILMS OF INDIUM OXIDE

Authors
HAKAM A BANOUQ M OUBOUMALK L SAIDI Y CHOUIYAKH A
Citation
A. Hakam et al., EFFECTS OF DEPOSITION RATE ON THE OPTICAL AND ELECTRICAL-PROPERTIES OF REACTIVELY EVAPORATED THIN-FILMS OF INDIUM OXIDE, Annales de chimie, 23(1-2), 1998, pp. 385-388
Citations number
9
Categorie Soggetti
Chemistry,"Material Science
Journal title
Annales de chimie → ACNP
ISSN journal
01519107
Volume
23
Issue
1-2
Year of publication
1998
Pages
385 - 388
Database
ISI
SICI code
0151-9107(1998)23:1-2<385:EODROT>2.0.ZU;2-X
Abstract
Thin films of indium oxide were prepared by thermal reactive evaporati on of a mixture of indium oxide and metallic indium followed by therma l treatment in a vacuum chamber containing a low pressure of oxygen ju st after deposition. This investigation optimizes the deposition rate to obtain high electrical conductivity and a good optical transparency . The films prepared with an optimum deposition rate Ve = 2 Angstrom.s (-1) are nearly stoichiometric and have a good cristallinity. These fi lms showed a transmittance of more than 80% in the visible region and a conductivity >10(3) (Omega.cm)(-1).