INVESTIGATION OF ACCEPTOR LEVELS AND HOLE SCATTERING MECHANISMS IN P-GALLIUM SELENIDE BY MEANS OF TRANSPORT MEASUREMENT UNDER PRESSURE

Citation
D. Errandonea et al., INVESTIGATION OF ACCEPTOR LEVELS AND HOLE SCATTERING MECHANISMS IN P-GALLIUM SELENIDE BY MEANS OF TRANSPORT MEASUREMENT UNDER PRESSURE, High pressure research, 16(1), 1998, pp. 13-26
Citations number
36
Categorie Soggetti
Physics
Journal title
ISSN journal
08957959
Volume
16
Issue
1
Year of publication
1998
Pages
13 - 26
Database
ISI
SICI code
0895-7959(1998)16:1<13:IOALAH>2.0.ZU;2-S
Abstract
The effect of pressure on acceptor levels and hole scattering mechanis ms in p-GaSe is investigated through Hall effect and resistivity measu rements under quasi-hydrostatic conditions up to 4 GPa. The pressure d ependence of the hole concentration is interpreted through a carrier s tatistics equation with a single (nitrogen) or double (tin) acceptor w hose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also a ccounted for by considering the pressure dependencies of both the phon on frequencies and the hole-phonon coupling constant involved in the s cattering rates.