1.3-MU-M INASP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MBE

The authors report the design, growth and optical properties of InAsP/ InGaAsP and InAsP/InGaP lasers with compressively-strained quantum wel ls, Both tensile-strained and lattice-matched quaternary barriers were investigated. Strain-compensated structures, i.e. those with tensile- strained barriers, show narrow photoluminescence and X-ray diffraction linewidths indicating high crystalline quality. These devices were su bsequently processed into ridge waveguide lasers and a threshold curre nt of similar to 1 kA/cm(2) was obtained for a strain-compensated five well structure.