Silicon oxide and hydrogen are ubiquitous in materials and processing
issues in microelectronics. This paper reviews the value of infrared a
bsorption spectroscopy to characterize the chemical and structural nat
ure of silicon oxides, including buried oxides, and the presence of hy
drogen both at silicon surfaces and in silicon oxides. Results involvi
ng the wet chemical cleaning of silicon and the fabrication issues of
Silicon-on-Insulator are presented. Particular emphasis is given to th
e characterization of buried interfaces, for which IR spectroscopy is
particularly useful.