ADVANCES IN CUBIC SILICON-CARBIDE SURFACES AND SELF-ORGANIZED ONE-DIMENSIONAL SUB-NANOSCALE OBJECTS

We review the most recent advances into the knowledge and the understa nding of cubic silicon carbide beta-SiC(100) surfaces. These investiga tions are based on the use of advanced experimental techniques such as photoemission spectroscopies with x-rays and synchrotron radiation so urces, atom-resolved scanning tunneling microscopy, complementary low energy electron diffraction for characterisation, and state-of-the-art theoretical methods such as total energy ab-initio calculations using the local density functional approximation and scanning tunneling mic roscopy image simulations. Surface preparation and morphology, atomic geometry, reconstructions, phase transition and the discovery of self- organized Si atomic lines having fascinating characteristics are descr ibed for Si-terminated beta-SiC(100) surfaces. Such important issues a s e.g. the role of defects or stress in surface atomic ordering will b e addressed. These investigations brings deep insights into the knowle dge and understanding of technologically important silicon carbide sur faces and reveal a novel aspect of SiC in its ability to be a very sui table material in nanotechnologies and micro/nano-electronics of the f uture.