INVESTIGATION OF THE OFFSET CHARGE NOISE IN SINGLE-ELECTRON TUNNELINGDEVICES

The offset charge noise in metallic single electron tunneling (SET) de vices fabricated on dielectric substrates was experimentally studied, On the basis of stereoscopic measurements of the low-frequency charge noise we show that the substrate makes an essential contribution to th e total noise, We have observed that the intensity of the charge noise in SET transistors depends on the biasing de current but is almost in sensitive to temperature variations up to 300 mK. Stability investigat ions of an SET trap gave storage times of more than 8 h, The performan ce of such a device is affected by the bias current of a readout elect rometer, located nearby, and by background charges.