TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE OF LAYER SEMICONDUCTOR P-GATE

The photoluminescence (PL) spectra of undoped p-GaTe al 97 K are domin ated by two emission bands at 1.76 and 1.59 eV. For the 1.76 eV emissi on band, the behavior of the peak energy and full-width at half-maximu m as a function of temperature shows the characteristics of the recomb ination mechanism for the free exciton. We find, from the temperature dependence of the PL intensity of the 1.59 eV emission band, that the band is caused by the transition from the donor level to the acceptor level located at 0.15 eV above the valence band. (C) 1998 Elsevier Sci ence B.V. All rights reserved.