Silicon is the most important semiconducting material in the microelec
tronics industry, If current miniaturization trends continue, minimum
device features will soon approach the size of atomic clusters. In thi
s size regime, the structure and properties of materials often differ
dramatically from those of the hulk, An enormous effort has been devot
ed to determining the structures of free silicon clusters(1-22). Altho
ugh progress has been made for Si-n with n < 8, theoretical prediction
s for larger clusters are contradictory(2-22) and none enjoy any compe
lling experimental support, Here we report geometries calculated for m
edium-sized silicon clusters using an unbiased global search with a ge
netic algorithm. Ion mobilities(23) determined for these geometries by
trajectory calculations are in excellent agreement,vith the values th
at we measure experimentally, The cluster geometries that we obtain do
not correspond to fragments of the hulk, For n = 12-18 they are built
on a structural motif consisting of a stack of Si-9 tricapped trigona
l prisms, For n greater than or equal to 19, our calculations predict
that near-spherical cage structures become the most stable, The transi
tion to these more spherical geometries occurs in the measured mobilit
ies for slightly larger clusters than in the calculations, possibly be
cause of entropic effects.