NEAR-FIELD RAMAN-SPECTROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES AND CVD-DIAMOND LAYERS

Citation
M. Goetz et al., NEAR-FIELD RAMAN-SPECTROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES AND CVD-DIAMOND LAYERS, Journal of luminescence, 76-7, 1998, pp. 306-309
Citations number
12
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
76-7
Year of publication
1998
Pages
306 - 309
Database
ISI
SICI code
0022-2313(1998)76-7:<306:NROSHA>2.0.ZU;2-9
Abstract
Raman scattering from semiconductor surfaces as well as from bulk and CVD diamond samples has been detected with high spatial resolution usi ng a near-held optical microscope operating in the detection mode. Fir st- and second-order near-resonant Raman scattering involving the 250 cm(-1) longitudinal optical (LO) phonon of ZnSe in an epitaxial ZnSe l ayer on GaAs has been studied in the vicinity of the heterointerface. CVD diamond samples were investigated using the near field as well as a conventional optical microscope. A positional dependence of the scat tering from diamond and graphitic carbon has been found in the near-fi eld experiments. (C) 1998 Elsevier Science B.V. All rights reserved.