M. Goetz et al., NEAR-FIELD RAMAN-SPECTROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES AND CVD-DIAMOND LAYERS, Journal of luminescence, 76-7, 1998, pp. 306-309
Raman scattering from semiconductor surfaces as well as from bulk and
CVD diamond samples has been detected with high spatial resolution usi
ng a near-held optical microscope operating in the detection mode. Fir
st- and second-order near-resonant Raman scattering involving the 250
cm(-1) longitudinal optical (LO) phonon of ZnSe in an epitaxial ZnSe l
ayer on GaAs has been studied in the vicinity of the heterointerface.
CVD diamond samples were investigated using the near field as well as
a conventional optical microscope. A positional dependence of the scat
tering from diamond and graphitic carbon has been found in the near-fi
eld experiments. (C) 1998 Elsevier Science B.V. All rights reserved.