EXCIMER-LASER DEPOSITION OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS ON SILICON SUBSTRATES WITH DIRECT-CURRENT GLOW-DISCHARGE

Authors
ZHENG LR HU XH YANG PX XU WP LIN CL
Citation
Lr. Zheng et al., EXCIMER-LASER DEPOSITION OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS ON SILICON SUBSTRATES WITH DIRECT-CURRENT GLOW-DISCHARGE, Journal of materials research, 12(5), 1997, pp. 1179-1182
Citations number
10
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
12
Issue
5
Year of publication
1997
Pages
1179 - 1182
Database
ISI
SICI code
0884-2914(1997)12:5<1179:EDOCOP>2.0.ZU;2-4
Abstract
Ferroelectric thin films of Pb(Zr, Ti)O-3 (PZT) were fabricated on pla tinum-coated silicon using the process of direct-current glow discharg e assisted laser deposition, where the substrate was electrically grou nded. The films deposited at 730 degrees C with +800 V discharge volta ge are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible m echanism for the improvement of the deposition process has been propos ed.