E-V ENERGY TRANSFER-BETWEEN F-CENTERS AND DISTANT OH- OD- IONS IN CSBR CRYSTALS/

Citation
V. Dierolf et al., E-V ENERGY TRANSFER-BETWEEN F-CENTERS AND DISTANT OH- OD- IONS IN CSBR CRYSTALS/, Journal of luminescence, 76-7, 1998, pp. 526-529
Citations number
10
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
76-7
Year of publication
1998
Pages
526 - 529
Database
ISI
SICI code
0022-2313(1998)76-7:<526:EETFAD>2.0.ZU;2-7
Abstract
The E-V energy transfer from electronic excited states of F centers in CsBr to the vibrational modes of OD- impurities is studied with Raman scattering. It was found that even in unaggregated samples, with stat istically distributed defects separated by fairly long distances, a st rong E-V transfer exists. For moderate OD--concentrations( approximate to 10(-4)) its efficiency is almost 100%, similar to the one found fo r the next nearest (100)-neighbor F-H(OH-)-complex. Simultaneously, im purities or impurity pairs which have captured an extra electron are d etected even at lowest temperatures. This is clear evidence that elect ron transfer occurs as well and suggests interrelation between the two transfer processes. (C) 1998 Elsevier Science B.V. All rights reserve d.