DIRECT OBSERVATION OF HYDROGEN ETCHING ANISOTROPY ON DIAMOND SINGLE-CRYSTAL SURFACES

Citation
Cl. Cheng et al., DIRECT OBSERVATION OF HYDROGEN ETCHING ANISOTROPY ON DIAMOND SINGLE-CRYSTAL SURFACES, Physical review letters, 78(19), 1997, pp. 3713-3716
Citations number
26
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
78
Issue
19
Year of publication
1997
Pages
3713 - 3716
Database
ISI
SICI code
0031-9007(1997)78:19<3713:DOOHEA>2.0.ZU;2-F
Abstract
Etching of natural diamonds by atomic hydrogen has been investigated o n C(100), C(110), and C(111) single crystal surfaces. Infrared absorpt ion spectroscopy and low-energy electron diffraction provide direct ev idence for an etching anisotropy at 1100 K. The results indicate that, in the presence of atomic hydrogen, {111}-oriented facet formation ir reversibly occurs on both C(110) and C(100), whereas C(111) remains in tact. The finding has important implications for chemical vapor deposi tion diamond synthesis and H-plasma surface polishing.