ON SOME PHYSICAL CHARACTERISTICS OF GAAS-(CA,AI)AS QUANTUM-WELL PHOTOLUMINESCENCE

Authors
DE SS GHOSH AK BERA M
Citation
Ss. De et al., ON SOME PHYSICAL CHARACTERISTICS OF GAAS-(CA,AI)AS QUANTUM-WELL PHOTOLUMINESCENCE, Canadian journal of physics, 76(2), 1998, pp. 105-110
Citations number
17
Categorie Soggetti
Physics
Journal title
Canadian journal of physics → ACNP
ISSN journal
00084204
Volume
76
Issue
2
Year of publication
1998
Pages
105 - 110
Database
ISI
SICI code
0008-4204(1998)76:2<105:OSPCOG>2.0.ZU;2-J
Abstract
Some physical characteristics of photoluminescence spectra in GaAs-(Ga ,Al)As quantum-wells under steady optical excitation conditions are pr esented. They are based on the dependence of photoluminescence on lase r intensity. The variations of carrier density with laser intensity an d electron-hole recombination decay time are compared with earlier exp erimental results.