Ss. De et al., ON SOME PHYSICAL CHARACTERISTICS OF GAAS-(CA,AI)AS QUANTUM-WELL PHOTOLUMINESCENCE, Canadian journal of physics, 76(2), 1998, pp. 105-110
Some physical characteristics of photoluminescence spectra in GaAs-(Ga
,Al)As quantum-wells under steady optical excitation conditions are pr
esented. They are based on the dependence of photoluminescence on lase
r intensity. The variations of carrier density with laser intensity an
d electron-hole recombination decay time are compared with earlier exp
erimental results.