THEORETICAL INVESTIGATION OF SOFT-X-RAY EMISSION FROM A SI(100) LAYERBURIED IN GAAS

Authors
MANKEFORS S NILSSON PO KANSKI J KARLSSON K
Citation
S. Mankefors et al., THEORETICAL INVESTIGATION OF SOFT-X-RAY EMISSION FROM A SI(100) LAYERBURIED IN GAAS, Vacuum, 49(3), 1998, pp. 181-184
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
49
Issue
3
Year of publication
1998
Pages
181 - 184
Database
ISI
SICI code
0042-207X(1998)49:3<181:TIOSEF>2.0.ZU;2-4
Abstract
Calculations of the soft x-ray emission spectrum have been carried out on a buried Si(100) layer in GaAs and compared with experimental data . We find that Si occupies Ga-as well as As-sites and that the local d ensity of states is different for these two cases. (C) 1998 Elsevier S cience Ltd. All rights reserved.