ONE-DIMENSIONAL LOCALIZATION IN POROUS A-SI1-CMNC

The temperature dependence of the conductance of porous silicon doped with manganese up to densities corresponding to the metallic side of t he Anderson transition is investigated. It is found that in the temper ature range below T = 40-60 K the conductance decreases with T as G(T) proportional to T-1/3. This behavior corresponds to one-dimensional el ectron localization in silicon wires under conditions of inelastic ele ctron-electron collisions with a small energy transfer. (C) 1998 Ameri can Institute of Physics.