MAGNETOTUNNELING IN SINGLE GAAS ALXGA1-XAS NON-ABRUPT BARRIERS/

The influence of an in-plane magnetic field on the electron transmissi on properties through single GaAs/AlxGa1-xAs non-abrupt barriers has b een investigated. The existence of graded interfaces shifts the resona nt peaks of the electron transmission towards high energy, and reduces their peak-to-valley ratio. These shifts are comparable with those pr oduced by a high magnetic field, and become more important when the ce nter coordinate of the orbital motion is localized close to the barrie r borders. Our results expose the limitation of the abrupt interface p icture in describing electron magnetotunneling through single GaAs/Alx Ga1-xAs barriers.