Js. Desousa et al., CARRIER TUNNELING AND ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAL ALXGA1-XAS SINGLE BARRIERS/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 55-59
The transmission properties and energy levels of electrons in doped Ga
As/AlxGa1-xAs single barriers are studied. The existence of nonabrupt
interfaces decreases the energy of the bound electron states in the ac
cumulation layers, and enhances their splitting in the case of thin ba
rriers. It also blue shifts the resonance peaks of the electron transm
ission and is responsible for a decrease in their peak-to-valley ratio
.