CARRIER TUNNELING AND ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAL ALXGA1-XAS SINGLE BARRIERS/

Authors
DESOUSA JS FREIRE JAK FARIAS GA FREIRE VN
Citation
Js. Desousa et al., CARRIER TUNNELING AND ENERGY-LEVEL SPLITTING IN DOPED NONABRUPT GAAL ALXGA1-XAS SINGLE BARRIERS/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 55-59
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
1-2
Year of publication
1998
Pages
55 - 59
Database
ISI
SICI code
0204-3467(1998)1-2:<55:CTAESI>2.0.ZU;2-D
Abstract
The transmission properties and energy levels of electrons in doped Ga As/AlxGa1-xAs single barriers are studied. The existence of nonabrupt interfaces decreases the energy of the bound electron states in the ac cumulation layers, and enhances their splitting in the case of thin ba rriers. It also blue shifts the resonance peaks of the electron transm ission and is responsible for a decrease in their peak-to-valley ratio .