KINETIC LIMIT OF SEGREGATION DURING THE MOLECULAR-BEAM EPITAXY OF GAAS ALAS HETEROSTRUCTURES/

Authors
ZANELATTO G PUSEP YA GALZERANI JC GONZALEZBORRERO PP LUBYSHEV D BASMAJI P
Citation
G. Zanelatto et al., KINETIC LIMIT OF SEGREGATION DURING THE MOLECULAR-BEAM EPITAXY OF GAAS ALAS HETEROSTRUCTURES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 237-242
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
1-2
Year of publication
1998
Pages
237 - 242
Database
ISI
SICI code
0204-3467(1998)1-2:<237:KLOSDT>2.0.ZU;2-#
Abstract
The Raman spectra of the optical confined modes in the GaAs/AlAs ultra thin-layer superlattices grown under different growth conditions were used to determine the compositional profiles. A modified kinetic model was developed in order to calculate the compositional profiles in the samples under investigation. A comparison between the experimentally obtained compositional profiles and those calculated by the kinetic mo del allowed us to determine the parameters characterising the segregat ion process.