PHOTOELECTRICAL CHARACTERISTICS OF GAAS P-N-JUNCTIONS FORMED BY CU PHOTOSTIMULATED DIFFUSION

The influence of illumination of Cu-nGaAs structures by white light at room temperatures on the penetration of copper by diffusion into subs trates and on electrical and photovoltaic characteristics of structure s was investigated by using the energy dispersive x-ray fluorescence ( XRF) technique, current-voltage measurements and measurements of the s pectral distribution of the photosensitivity. The formation of a p-n j unction in GaAs as a result of photostimulated diffusion of copper int o GaAs was discovered. The prepared p-n photocells exhibited the param eters J(sc) = 1.3 mA cm(-2), V-oc = 315 mV and fill factor 0.35. The s pectral distribution of the photosensitivity of cells extended from 66 0 to 880 nm. The mechanism for photostimulated diffusion of Cu into Ga As at room temperatures suggested is related to the influence of inter nal electric fields arising in the near-surface region of GaAs substra tes under illumination.