CLEAN AND AS-COVERED ZINCBLENDE GAN(001) SURFACES - NOVEL SURFACE-STRUCTURES AND SURFACTANT BEHAVIOR

Citation
J. Neugebauer et al., CLEAN AND AS-COVERED ZINCBLENDE GAN(001) SURFACES - NOVEL SURFACE-STRUCTURES AND SURFACTANT BEHAVIOR, Physical review letters, 80(14), 1998, pp. 3097-3100
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
14
Year of publication
1998
Pages
3097 - 3100
Database
ISI
SICI code
0031-9007(1998)80:14<3097:CAAZGS>2.0.ZU;2-W
Abstract
We have investigated clean and As-covered zinc-blende GaN (001) surfac es, employing first-principles total-energy calculations. For clean Ga N surfaces our results reveal a novel surface structure very different from the well-established dimer structures commonly observed on polar III-V (001) surfaces: The energetically most stable surface is achiev ed by a Peierls distortion of the truncated (1 x 1) surface rather tha n through addition or removal of atoms. This surface exhibits a (1 x 4 ) reconstruction consisting of linear Ga tetramers. Furthermore, we fi nd that a submonolayer of arsenic significantly lowers the surface ene rgy indicating that As may be a good surfactant. Analyzing surface ene rgies and band structures we identify the mechanisms which govern thes e unusual structures and discuss how they might affect growth properti es.