POINT-DEFECT COMPENSATION PHENOMENA IN CDTE

Authors
FOCHOUK P SHCHERBAK L FEICHOUK P PANCHOUK O KRYLIOUK O
Citation
P. Fochouk et al., POINT-DEFECT COMPENSATION PHENOMENA IN CDTE, Calphad, 21(4), 1997, pp. 469-473
Citations number
19
Journal title
Calphad → ACNP
ISSN journal
03645916
Volume
21
Issue
4
Year of publication
1997
Pages
469 - 473
Database
ISI
SICI code
0364-5916(1997)21:4<469:PCPIC>2.0.ZU;2-V
Abstract
The self-compensation effect leading to limitations in free carrier de nsity rise with increasing dopant contents in CdTe was studied. Using the radiotracer technique, diffusivity, solubility and high-temperatur e electrical properties' measurements, dopant self-compensation was ob served in CdTe doped with Tn(Cu, Ge or Sn). The results are discussed in the framework of Kroger's point defect quasichemical reactions theo ry. Four theoretically possible types of dopant self-compensation are derived.