LOCALIZED EXCITONIC TRANSITIONS IN A ZNSE-ZN0.75CD0.25SE DOUBLE-SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY

Citation
Zp. Guan et al., LOCALIZED EXCITONIC TRANSITIONS IN A ZNSE-ZN0.75CD0.25SE DOUBLE-SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(14), 1998, pp. 1688-1690
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
14
Year of publication
1998
Pages
1688 - 1690
Database
ISI
SICI code
0003-6951(1998)72:14<1688:LETIAZ>2.0.ZU;2-J
Abstract
A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. Th e photoluminescence and photoreflectance have been employed to study t he subband transitions at low temperatures. At 1.4 K, except the two g round states and two higher subbands of n=1 light-hole and n=2 heavy-h ole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice, Those peaks were attributed to t he excitonic transitions from n=2 heavy-hole subband due to the fluctu ation of well-barrier interface. Another localized excitonic transitio n from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. (C) 1998 American Institute of Physics. [S0003-6951(98)02614-X].