ARSENIC INCORPORATION IN HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY

We report the results of in situ arsenic doping in HgCdTe layers grown by molecular beam epitaxy (MBE). Arsenic incorporation was carried ou t by two mechanisms called conventional doping and planar doping. The obtained results indicate that for both mechanisms, after Hg anneal, a rsenic was successfully incorporated as an acceptor during the MBE gro wth. Secondary ion mass spectrometry and Hall-effect measurements befo re and after Hg annealing were used to characterize arsenic activity i n the grown layers. Close to 100% acceptor doping efficiency with arse nic has been obtained on these MBE grown layers up to total arsenic co ncentrations of approximately 2 X 10(18) cm(-3), which is more than su fficient for a wide range of infrared devices. At much higher total ar senic concentrations, electrical activity falls off drastically as the doping level saturates. (C) 1998 American Institute of Physics. [S000 3-6951(98)00514-2].