HYDROGEN-DECORATED LATTICE-DEFECTS IN PROTON-IMPLANTED GAN

Several vibrational bands were observed near 3100 cm(-1) in GaN that h ad been implanted with hydrogen at room temperature and subsequently a nnealed, Our results indicate that these bands are due to nitrogen-dan gling-bond defects created by the implantation that an decorated by hy drogen, The frequencies are close to those predicted recently for V-Ga -H-n complexes, leading us to tentatively assign the new lines to V-Ga defects decorated with different numbers of H atoms. (C) 1998 America n Institute of Physics. [S0003-6951(98)03614-6].