STRAIN VARIATIONS IN INGAASP INGAP SUPERLATTICES STUDIED BY SCANNING PROBE MICROSCOPY/

Citation
Hj. Chen et al., STRAIN VARIATIONS IN INGAASP INGAP SUPERLATTICES STUDIED BY SCANNING PROBE MICROSCOPY/, Applied physics letters, 72(14), 1998, pp. 1727-1729
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
14
Year of publication
1998
Pages
1727 - 1729
Database
ISI
SICI code
0003-6951(1998)72:14<1727:SVIIIS>2.0.ZU;2-3
Abstract
Strain-compensated InGaAsP/InGaP superlattices are studied in cross se ction by atomic force microscopy and scanning tunneling microscopy. Un dulations in the morphology of the {110} cross-sectional faces an obse rved, and are attributed to elastic relaxation of this surface due to underlying strain arising from thickness and compositional variations of the superlattice layers. Finite element computations are used to ex tract a quantitative measure of the strain variation. (C) 1998 America n Institute of Physics. [S0003-6951(98)03314-2].