Strain-compensated InGaAsP/InGaP superlattices are studied in cross se
ction by atomic force microscopy and scanning tunneling microscopy. Un
dulations in the morphology of the {110} cross-sectional faces an obse
rved, and are attributed to elastic relaxation of this surface due to
underlying strain arising from thickness and compositional variations
of the superlattice layers. Finite element computations are used to ex
tract a quantitative measure of the strain variation. (C) 1998 America
n Institute of Physics. [S0003-6951(98)03314-2].