MODELING OF PLANAR ION-EXCHANGED ER3-DOPED GLASS WAVE-GUIDE AMPLIFIERS()

Citation
Jp. Laine et al., MODELING OF PLANAR ION-EXCHANGED ER3-DOPED GLASS WAVE-GUIDE AMPLIFIERS(), Optical engineering, 37(4), 1998, pp. 1182-1187
Citations number
14
Categorie Soggetti
Optics
Journal title
ISSN journal
00913286
Volume
37
Issue
4
Year of publication
1998
Pages
1182 - 1187
Database
ISI
SICI code
0091-3286(1998)37:4<1182:MOPIEG>2.0.ZU;2-M
Abstract
Modeling results for Er3+-doped waveguide amplifiers fabricated by var ious ion-exchange processes are presented. The gain performance of the se devices for 0.98- and 1.48-mu m pump wavelengths are compared. Meas ured spectroscopic properties of a phosphate glass with Er3+ concentra tion of 3.7 x 10(20) Cm-3 are used throughout the modeling, and wavegu ide propagation loss of 0.1 to 0.6 dB/cm is used. It is shown that gai n coefficients exceeding 5 dB/cm are feasible utilizing optimized ion- exchanged waveguides in this glass. The modeling is performed for glas ses doped with erbium only, excluding possible ytterbium codoping. (C) 1998 Society of Photo-Optical Instrumentation Engineers.