HIGH-EFFICIENCY 0.5W A AT 85-DEGREES-C STRAINED MULTIQUANTUM-WELL LASERS ENTIRELY GROWN BY MOVPE ON P-INP SUBSTRATE/

Authors
NAKAMURA T TSURUOKA K UDA A FUKUSHIMA K TORIKAI T
Citation
T. Nakamura et al., HIGH-EFFICIENCY 0.5W A AT 85-DEGREES-C STRAINED MULTIQUANTUM-WELL LASERS ENTIRELY GROWN BY MOVPE ON P-INP SUBSTRATE/, Electronics Letters, 34(6), 1998, pp. 556-558
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
6
Year of publication
1998
Pages
556 - 558
Database
ISI
SICI code
0013-5194(1998)34:6<556:H0AA8S>2.0.ZU;2-C
Abstract
An efficiency of 0.5W/A, the highest ever reported for conventional qu aternary InGaAsP materials, and a high maximum output power of 40mW at 85 degrees C were realised for 1.3 mu m strained multiquantum well (M QW) lasers entirely grown by MOVPE on a p-InP substrate.